Silicon carbide testing service

Silicon Carbide Testing Service for Global Advanced Ceramics and Semiconductor Compliance

As an ISO/IEC 17025 accredited laboratory, we deliver a specialized silicon carbide testing service that verifies the chemical purity, crystal structure, mechanical strength, thermal conductivity, electrical properties, and long-term reliability of SiC materials used in semiconductors, advanced ceramics, abrasives, refractories, and power electronics. Our silicon carbide testing service supports manufacturers and exporters of SiC wafers, ceramic components, wear parts, and abrasive grains who must demonstrate conformity to ASTM, ISO, EN, SEMI, and regional advanced material standards across the European Union, North America, East Asia, and the Middle East. Every test is performed under our CNAS-accredited quality system, producing reports accepted by notified bodies, semiconductor OEMs, and procurement teams worldwide.

Product Samples We Regularly Test in Our Silicon Carbide Testing Service

Monocrystalline silicon carbide wafers — 4H-SiC and 6H-SiC substrates for power devices, RF components, and optoelectronics
Reaction-bonded and sintered silicon carbide ceramic components — for mechanical seals, pump bearings, armor, and kiln furniture
Chemical vapor deposited silicon carbide — high-purity CVD-SiC for semiconductor process equipment and optical mirrors
Silicon carbide abrasive grains and powders — for grinding wheels, sandpaper, wire saws, and lapping compounds
Silicon carbide refractories and kiln shelves — for high-temperature furnaces, incinerators, and ceramic firing
SiC-based metal matrix composites and cermets — for brake discs, wear plates, and ballistic protection
Custom-shaped and machined silicon carbide components — for OEM integration in semiconductor, aerospace, and energy applications

Chemical Composition and Purity Analysis for Silicon Carbide

Total silicon carbide content and free silicon determination per ASTM C571 and ISO 9286 — the mass fractions of SiC, free silicon, free carbon, and silicon dioxide are quantified to verify the material grade and to detect any unreacted raw materials or contamination from the manufacturing process.
Trace metal impurity analysis by ICP-MS per SEMI MF1724 and ASTM E3061 — the concentration of iron, copper, nickel, chromium, and other transition metals is measured at parts-per-billion levels to ensure the silicon carbide meets the purity requirements for semiconductor and high-performance applications.
Nitrogen, oxygen, and hydrogen content by inert gas fusion per ASTM E1447 — the interstitial gas content is determined to predict the electrical and thermal properties of the SiC and to detect any residual porosity or incomplete densification.
X-ray fluorescence for elemental composition per ASTM E1621 — the bulk chemical composition including silicon, carbon, and any sintering aids such as boron or aluminum is quantified to verify the SiC grade and to support process control.
X-ray photoelectron spectroscopy for surface chemistry and oxidation state per ASTM E1078 — the surface composition and the chemical state of silicon and carbon are analyzed to detect surface oxidation, contamination, or the presence of a native oxide layer.
Infrared spectroscopy for polytype and bonding identification per ASTM E1252 — the infrared absorption spectrum is acquired to confirm the Si-C bonding and to identify the polytype (3C, 4H, or 6H) of the silicon carbide material.

Physical and Mechanical Property Testing for Silicon Carbide

Density and porosity by Archimedes method per ASTM C373 and ISO 18754 — the bulk density, apparent porosity, and water absorption are measured to verify the densification level and to predict the mechanical and thermal performance of the silicon carbide component.
Vickers and Knoop hardness per ASTM C1327 and ISO 6507-1 — the microhardness of the SiC surface is measured to verify the specified hardness class, which directly correlates with wear resistance and the ability to withstand contact stress.
Flexural strength and modulus of rupture per ASTM C1161 and ISO 14704 — three-point or four-point bending tests determine the ultimate bending resistance, ensuring the silicon carbide component withstands mechanical loads and thermal stress without fracture.
Compressive strength per ASTM C773 — the SiC is compressed to failure to verify its load-bearing capacity in structural and high-pressure applications such as mechanical seals and pump components.
Fracture toughness by indentation and single-edge notch beam methods per ASTM C1421 — the critical stress intensity factor is measured to quantify the resistance to crack propagation and to predict the reliability of the silicon carbide under impact and thermal shock.
Weibull modulus and strength distribution analysis per ASTM C1239 — multiple flexural specimens are tested and the Weibull statistics are calculated to characterize the variability of the SiC strength and to support probabilistic design.

Thermal Performance and High-Temperature Testing for Silicon Carbide

Thermal conductivity by laser flash method per ASTM E1461 and ISO 22007-4 — the thermal diffusivity and specific heat of the silicon carbide are measured from room temperature to elevated temperatures, and the thermal conductivity is calculated to verify the material's heat dissipation capability for power electronics and thermal management.
Coefficient of thermal expansion by dilatometry per ASTM E228 and ISO 7991 — the linear thermal expansion is measured to verify the SiC's low CTE characteristic, which provides dimensional stability and resistance to thermal shock in high-temperature applications.
Thermal shock resistance by water quenching per ASTM C1525 — the silicon carbide specimen is heated to a defined high temperature and rapidly quenched, and the residual strength is measured to verify the material withstands the extreme thermal gradients of semiconductor processing and high-temperature furnace operation.
High-temperature oxidation resistance per ASTM C863 — the SiC is heated in an oxidizing atmosphere and the mass gain and oxide layer thickness are measured to predict the long-term stability of the material at high temperatures in air.
Long-term high-temperature stability and creep resistance per ASTM C1291 — the silicon carbide is subjected to sustained load at elevated temperature and the time-dependent deformation is measured to predict the service life under continuous high-temperature stress.
Thermal cycling endurance per IEC 60068-2-14 — the SiC component is rapidly cycled between hot and cold extremes to verify the material withstands repeated thermal expansion and contraction without micro-cracking or performance degradation.

Electrical and Semiconductor Performance Testing for Silicon Carbide

Volume and surface resistivity per ASTM D257 and IEC 60093 — the electrical resistance through and across the silicon carbide is measured to classify the material as insulating, semi-insulating, or conductive, depending on the intended semiconductor or ceramic application.
Dielectric strength and breakdown voltage per ASTM D149 and IEC 60243-1 — the voltage at which electrical failure occurs through the SiC is measured to verify the insulation capability for high-voltage power devices and electronic substrates.
Dielectric constant and dissipation factor per ASTM D150 and IEC 60250 — the relative permittivity and loss tangent are determined at specified frequencies to qualify the silicon carbide for high-frequency and RF applications.
Carrier concentration and mobility by Hall effect measurement per ASTM F76 — for semiconductor-grade SiC wafers, the carrier type, concentration, and Hall mobility are measured to verify the doping level and the electrical transport properties of the epitaxial layer.
Resistivity mapping and uniformity across the wafer per SEMI MF84 — four-point probe measurements across the SiC wafer generate a resistivity map, identifying any doping non-uniformity or defects that would reduce device yield.
Breakdown voltage and leakage current of epitaxial layers per internal and customer protocols — the SiC epitaxial layer is tested for reverse breakdown voltage and leakage current to verify it meets the requirements for high-voltage Schottky diodes and MOSFETs.

Microstructural and Crystallographic Analysis for Silicon Carbide

X-ray diffraction phase and polytype identification per ASTM D3720 — the crystalline phases and the SiC polytype are identified to verify the material's structure and to detect any phase transformation or contamination during processing.
Rocking curve and crystal quality measurement per SEMI MF2350 — the full width at half maximum of the X-ray rocking curve is measured to assess the crystallographic perfection of monocrystalline SiC wafers, which directly affects device performance.
Etch pit density and dislocation count per SEMI MF1725 — the SiC wafer is etched and the number of dislocations and micropipes per unit area is counted to verify the wafer meets the defect density specification for power device manufacturing.
Scanning electron microscopy with energy dispersive X-ray spectroscopy per ASTM E1508 — the microstructure, grain size, and the distribution of sintering aids or secondary phases are imaged to verify the material quality and to detect any processing defects.
Transmission electron microscopy for nano-scale defect characterization per ASTM E2530 — high-resolution imaging reveals the nature and distribution of crystallographic defects such as stacking faults and dislocations in the silicon carbide.
Residual stress measurement by X-ray diffraction per ASTM E915 — the surface and near-surface residual stresses are measured to ensure that machining and polishing have not introduced harmful tensile stresses that could cause cracking.

Chemical Safety and Restricted Substance Compliance for Silicon Carbide

RoHS compliance per IEC 62321 and EU Directive 2011/65/EU — quantitative screening for lead, mercury, cadmium, hexavalent chromium, PBBs, and PBDEs in the silicon carbide and any binders, coatings, or sintering aids.
REACH Annex XVII and SVHC screening — targeted analysis of Substances of Very High Concern including specific heavy metal compounds and restricted additives that may be present in the SiC manufacturing process.
Heavy metals in packaging per EU Directive 94/62/EC — verification that the sum concentration of lead, cadmium, mercury, and hexavalent chromium in the protective packaging and labels is below the 100 ppm regulatory limit.
Dustiness and respirable particle assessment per EN 15051 — for SiC powders and abrasive grains, the inhalable and respirable dust fractions are measured to support occupational safety documentation and safe handling instructions.
Volatile organic compound emission per ISO 16000-3 — chamber testing verifies that the silicon carbide product does not release harmful VOCs or formaldehyde during storage or use.

Report Recognition and ISO/IEC 17025 Compliance

Every test method described in this silicon carbide testing service is covered by our ISO/IEC 17025 scope of accreditation. Our technical reports and certificates of analysis are accepted by European notified bodies for advanced ceramics and electronic components, by North American semiconductor and power electronics OEMs referencing ASTM and SEMI standards, and by customs and procurement authorities across Japan, Korea, and the Gulf region. Whether you require a complete qualification dossier for a new silicon carbide material, a batch release inspection for an export shipment, or a root cause failure analysis of a performance or processing issue, our laboratory provides the measurement accuracy and advanced material expertise that the global silicon carbide industry demands.