High-voltage diode testing service

High-Voltage Diode Testing Service for Global Power Electronics Compliance

As an ISO/IEC 17025 accredited laboratory, we deliver a specialized high-voltage diode testing service that verifies electrical performance, reverse recovery characteristics, thermal stability, mechanical integrity, and long-term reliability of diodes used in power supplies, X-ray equipment, particle accelerators, and industrial rectifier systems. Our high-voltage diode testing service supports manufacturers and exporters of silicon, silicon carbide, and fast-recovery high-voltage diodes who must demonstrate conformity to IEC 60747, MIL-PRF-19500, JEDEC, and regional power electronics standards across the European Union, North America, East Asia, and the Middle East. Every test is performed under our CNAS-accredited quality system, producing reports accepted by notified bodies, power supply OEMs, and procurement teams worldwide.

Product Samples We Regularly Test in Our High-Voltage Diode Testing Service

High-voltage silicon rectifier diodes — for power supply rectification, voltage multipliers, and industrial converters
Silicon carbide Schottky and PiN diodes — for high-frequency, high-temperature, and high-efficiency power conversion
Fast-recovery and ultrafast high-voltage diodes — for snubber circuits, freewheeling applications, and pulse generators
Avalanche-rated high-voltage diodes — with controlled breakdown characteristics for transient suppression and protection circuits
High-voltage diode stacks and assemblies — series-connected diodes in encapsulated modules for X-ray generators and electrostatic precipitators
High-voltage rectifier bridges and modules — integrated multi-diode configurations for three-phase and high-power applications
Custom and application-specific high-voltage diodes — with special packaging, terminations, or screening requirements

Electrical and Switching Performance Testing for High-Voltage Diodes

Forward voltage drop and forward current characteristics per IEC 60747-2 and MIL-PRF-19500 — the forward voltage is measured at specified forward currents to verify the diode conducts with the expected voltage drop and to calculate conduction losses under operating conditions.
Reverse breakdown voltage and leakage current measurement per IEC 60747-2 — the diode is reverse-biased to its rated breakdown voltage and the reverse leakage current is measured to confirm the device blocks the specified voltage with minimal leakage, ensuring safe operation in high-voltage circuits.
Reverse recovery time and reverse recovery charge per JEDEC JESD24 — the diode is switched from forward conduction to reverse blocking, and the reverse recovery time and stored charge are measured to characterize the switching losses and electromagnetic interference generated by the high-voltage diode.
Forward surge current capability per IEC 60747-2 — the diode is subjected to a defined non-repetitive surge current pulse to verify it withstands short-duration overload conditions without degradation or failure.
Capacitance-voltage characteristic per IEC 60747-2 — the junction capacitance is measured as a function of reverse voltage to provide the data required for high-frequency circuit design and snubber optimization.
Switching loss and softness factor measurement per customer and internal protocols — the diode is tested in a clamped inductive load circuit to measure turn-off losses and the softness of the reverse recovery waveform, essential for evaluating electromagnetic compatibility in high-frequency power supplies.

Thermal Stability and Power Cycling Testing for High-Voltage Diodes

Thermal resistance and junction temperature measurement per JEDEC JESD51 — the thermal impedance from junction to case and junction to ambient is measured to verify the diode meets the specified thermal performance and to support heatsink design for high-voltage applications.
Power cycling and thermal fatigue testing per JEDEC JESD22-A104 — the high-voltage diode is subjected to repeated power-on and power-off cycles, and the change in forward voltage, reverse leakage, and thermal resistance is monitored to predict the service life under cyclic thermal stress.
High-temperature reverse bias testing per JEDEC JESD22-A101 — the diode is operated at maximum rated junction temperature with reverse bias applied, and the leakage current and breakdown voltage are tracked to detect any thermally induced degradation or surface instability.
High-temperature storage and forward bias aging per JEDEC JESD22-A103 — the diode is aged at elevated temperatures and the electrical characteristics are remeasured to predict long-term reliability under high-temperature operating conditions.
Thermal shock and rapid temperature cycling per JEDEC JESD22-A106 — the diode is rapidly transferred between hot and cold extremes to verify the package, solder joints, and semiconductor die withstand thermal expansion stresses without cracking or delamination.
Temperature coefficient of forward voltage and breakdown voltage per IEC 60747-2 — the change in electrical parameters with temperature is measured to provide the data required for circuit design across the operating temperature range.

Mechanical Integrity and Environmental Durability Testing for High-Voltage Diodes

Terminal strength and lead integrity per MIL-STD-750 Method 2036 — the mechanical strength of the diode leads and terminals is tested by pull, bend, and torque methods to ensure the device withstands assembly and field handling without damage.
Solderability and solder heat resistance per J-STD-002 and MIL-STD-750 Method 2026 — the diode terminations are tested for solder wetting and resistance to reflow or wave soldering temperatures, ensuring reliable assembly to printed circuit boards and heat sinks.
Vibration and mechanical shock resistance per JEDEC JESD22-B103 and MIL-STD-750 Method 2056 — the high-voltage diode is vibrated and subjected to shock pulses to simulate transport and operating conditions, with post-test electrical verification.
Damp heat and humidity exposure per JEDEC JESD22-A101 — the diode is stored at 85 °C and 85% relative humidity, followed by electrical retests to confirm no moisture-induced degradation of the package or the semiconductor junction.
Neutral salt spray and corrosion resistance per ASTM B117 — for diodes with metal packages or exposed terminations, the corrosion resistance is evaluated in marine and industrial environments.
Solvent and cleaning agent resistance per MIL-STD-750 Method 1022 — the diode package and markings are exposed to common cleaning solvents to verify no degradation of the encapsulation or legibility of the marking.

Insulation and High-Voltage Withstand Testing for High-Voltage Diode Assemblies

Dielectric strength and high-voltage withstand test per IEC 60747 and MIL-STD-750 — a high voltage is applied between the diode terminals and the package or mounting surface to verify the insulation system withstands the rated isolation voltage without breakdown, critical for high-voltage stacks and modules.
Partial discharge and corona inception voltage measurement per IEC 60270 — for high-voltage diode assemblies, the partial discharge level is measured to detect internal voids, delamination, or contamination that would cause long-term insulation degradation under high electric fields.
Insulation resistance measurement per MIL-STD-750 Method 2001 — the resistance between the diode terminals and the package is measured to confirm adequate electrical isolation for safe operation in high-voltage circuits.
Creepage and clearance distance verification per IEC 60664-1 — the physical spacing between terminals and between terminals and the package is measured to ensure compliance with the required insulation coordination for the rated working voltage.

Chemical Safety and Restricted Substance Compliance for High-Voltage Diodes

RoHS compliance per IEC 62321 and EU Directive 2011/65/EU — quantitative screening for lead, mercury, cadmium, hexavalent chromium, PBBs, and PBDEs in the semiconductor die, package, plating, and solder to ensure the high-voltage diode meets global substance restrictions.
REACH Annex XVII and SVHC screening — targeted analysis of Substances of Very High Concern including specific phthalate plasticizers and brominated flame retardants in the encapsulation and packaging materials.
Halogen content by combustion ion chromatography per EN 14582 — the total fluorine, chlorine, bromine, and iodine content is measured to support halogen-free declarations for environmentally conscious power electronics.
Heavy metals in packaging per EU Directive 94/62/EC — verification that lead, cadmium, mercury, and hexavalent chromium sum concentration in the tape, reel, and carton packaging is below the 100 ppm regulatory limit.

Report Recognition and ISO/IEC 17025 Compliance

Every test method described in this high-voltage diode testing service is covered by our ISO/IEC 17025 scope of accreditation. Our technical reports and certificates of analysis are accepted by European notified bodies, by North American power electronics OEMs referencing MIL-PRF and JEDEC standards, and by customs and procurement authorities across Japan, Korea, and the Gulf region. Whether you require a complete qualification dossier for a new high-voltage diode design, a batch release inspection for an export shipment, or a root cause failure analysis of a field-returned device, our laboratory provides the measurement accuracy and semiconductor expertise that the global power conversion industry demands.